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Article

Title: P-type Nanowires Prove Promising

Author: Staff Article Type: Product Analysis
Source: R&D Magazine, v49 n2 p57(1) Publication Date: Feb 2007
  ISSN: 0746-9179
  Illustrations: Output Samples
URL of Publication: http://www.rdmag.com

In the making of electron-abundant n-type zinc oxide (ZnO) nanowire crystals, lack of accompanying p-type ZnO nanowires has prevented development of a wide range of ZnO nanodevices, including light-emitting diodes (LEDs). Engineers at the University of California, San Diego (UCSD) have been able to synthesize p-type zinc oxide nanowires. Zinc oxide nanostructures are very well studied, says Deli Wang of UCSD, and they are very easy to make, With the availability of p-type zinc oxide nanowires, opportunities for LEDs and beyond are endless. Topics covered are creating the p-type and To LEDs and beyond. The p-type ZnO nanowires were made by doping ZnO crystals with phosphorus. A chemical vapor deposition technique was used that is less costly than the metal organic chemical vapor deposition method often used for synthesis of gallium nitride-based LEDs. Professor Wang says that because zinc oxide is a wide band gap semiconductor, generating p-type doping impurities that provide free holes is very challenging, particularly in nanowires. He also says zinc oxide is a very good light emitter, so electrically driven zinc oxide single nanowire lasers could work as high efficiency nanoscale light sources for optical data storage, imaging, and biological and chemical sensing.

Special Features: Output Samples

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