Self-assembly is the method of choice for fabrication, so quantum dot lasers are gaining benefits from high-temperature-grown spacer layers and use of p-type modulation doping to improve temperature performance. For laser applications, quantum dots have to have a high optical efficiency, be small enough to allow energetically well-separated confined states, have a high density to allow high gain, show good uniformity, and be fabricated with standard epitaxial techniques. Self-assembly takes place when two semiconductors with very different lattice constants are grown epitaxially. Examples are indium arsenide's (InAs) formation of small islands, or quantum dots, when grown on gallium arsenide (GaAs). Topics covered are quantum dot lasers at 1.3 mu m and improving temperature stability. Recently, researchers have obtained an improved T-subscript 0 by p-type modulation doping of the quantum dots. When comparing two devices with and without p-type doping over the temperature range between minus-100-degrees-Centrigrade-to-plus-60-degrees-Centigrade, the doped device shows a reduced temperature sensitivity in comparison to the undoped device. However, above 60-degrees-centigrade, the temperature sensitivity of the two devices is for practical purposes identical. A goal is to extend the temperature-insensitive behavior of the doped device to higher temperatures. In time, performance enhancements will determine whether or not GaAs devices can provide a practical choice other than existing quantum-well lasers.